A new silicon material switches from insulator to metal in picoseconds. This breakthrough could speed up future computers.

A new method of changing electronic states on demand could make electronics 1,000 times faster and more efficient, ...

We study transport properties of quantum point contacts (QPCs) and quantum dots (QDs) with a global capping gate, fabricated on a Si/SiGe high electron mobility transistor (HEMT) wafer. By biasing the ...

This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the ...

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