A new silicon material switches from insulator to metal in picoseconds. This breakthrough could speed up future computers.

TaS₂, researchers were able to control its conductive properties, showing that this type of material could speed up ...

We study transport properties of quantum point contacts (QPCs) and quantum dots (QDs) with a global capping gate, fabricated on a Si/SiGe high electron mobility transistor (HEMT) wafer. By biasing the ...

This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the ...

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